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Title :ラマン分光による半導体クラスレートのゲストーホスト相互作用と超高圧相転移
Authors :清水, 宏晏
Issue Date :Mar-2008
Table of contents :3-9p: Shimizu H. et al., Raman and x-ray diffraction studies of Ba doped germanium clathrate Ba8Ge43 at high pressures. Journal of applied physics. 2007 101: 63549-(1-7)
10-15p: Shimizu H. et al., High-pressure Raman study on two modifications of BaAI2Si2. Phys. Stat. sol.(b). 2007 244(1): 357-361
16-20p: Shimizu H. et al., High-pressure Raman study of Ba doped type-Ⅲ germanium clathrate Ba24Ge100 up to 26 GPa. Journal of applied physics. 2007 101: 113531-(1-5)
21p: Shimizu H. et al., Semiconductor Clathrates at High Pressure. Abstract for the Workshop on Advances in High Pressure Crystallography @University of Oxford.
Abstract :平成18年度-平成19年度科学研究費補助金 (基盤研究(C) 一般 物性1 課題番号18540315) 研究成果報告書
Type Local :研究報告書
Appears in Collections:Grants-in-Aid for Scientific Research - Engineering